Snubber Resistor
A resistor in an RC or RCD network connected across a switching device (MOSFET, IGBT, diode, thyristor) to damp voltage transients, slow dV/dt and protect the semiconductor from over-voltage and oscillation.
Definition
When a power semiconductor switches off an inductive load, the energy stored in stray inductance (L_stray × I) is released as a voltage spike V = L × dI/dt across the device. Without protection, this spike can exceed the breakdown voltage and destroy the switch — or excite a resonant oscillation between L_stray and the device's output capacitance that radiates EMI and stresses the silicon. The snubber resistor, paired with a capacitor (RC) or capacitor-plus-diode (RCD), absorbs the energy and damps the resonance.
For a simple RC snubber, R is chosen for critical damping: R = √(L_stray / C) where C is selected to limit dV/dt to the device's safe operating area (e.g. < 1 kV/μs for older IGBTs). Power dissipation in the snubber is P = ½ × C × V² × f_sw × 2 (charge + discharge each cycle), which can reach tens of watts in a hard-switched 100 kHz converter. Snubber resistors must therefore handle continuous AC power at the switching frequency, not just the peak voltage.
Construction matters: snubbers see fast voltage transients, so low-inductance resistors are mandatory — bifilar wirewound or thick-film, never standard helical wirewound. Common sizes are 5 – 50 Ω, 5 – 25 W. RCD snubbers (capacitor charges through diode, discharges through resistor) reduce R's continuous loss in high-frequency applications.
Related terms
Non-Inductive Winding
A family of wirewound techniques (bifilar, Ayrton-Perry, reverse-layer) that reduce a resistor's self-inductance to negligible levels, enabling wirewound construction in high-frequency, pulse and switching applications.
Bifilar Winding
A non-inductive winding technique in which two parallel wires (or one folded wire) are wound side-by-side so opposing current directions cancel the magnetic field, dramatically lowering the resistor's self-inductance.
Thick-Film Resistor
A resistor manufactured by screen-printing a paste of ruthenium-oxide and glass frit onto a ceramic substrate and firing it at ~850 °C; dominant in surface-mount chip resistors and high-voltage cylindrical types.
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